ZnO Thin Films with Hole Conduction Produced by N+Ion Implantation and Oxygen-Radical Annealing
| Autor: | M. O. Vorob’ev, A. N. Gruzintsev, V. A. Dravin, V. T. Volkov, A. N. Georgobiani |
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| Rok vydání: | 2004 |
| Předmět: |
Photoluminescence
Materials science business.industry Annealing (metallurgy) Radical chemistry.chemical_element Condensed Matter Physics Photochemistry Thermal conduction Oxygen Electronic Optical and Magnetic Materials Ion implantation chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering Thin film business |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1063-7397 |
| DOI: | 10.1023/b:rumi.0000026174.37727.e1 |
| Popis: | Hole conduction is produced in ZnO thin films by N+ ion implantation and annealing in an oxygen-radical atmosphere. It is established that oxygen radicals are necessary for hole conduction to appear. The implantation and annealing are found to change not only the electrical behavior of the film but also its photoluminescence spectrum, creating UV and visible bands. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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