Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire
| Autor: | Peng Gao, Zhenghua Chang, Zhiqiang Liu, Fuzhen Zhao, Lianming Tong, Xiaoyan Yi, Zhongfan Liu, Jin Zhang, Bing Deng, Zhipeng Dou, Shishu Zhang, Kaihui Liu, Jianchang Yan, Shulin Chen, Zhaolong Chen, Hailin Peng, Tongbo Wei, Xiaozhi Xu, Haina Ci, Yunyu Wang, Jinmin Li, Zhenqian Pang, Yujie Wei, Ruoyu Wang, Yue Qi |
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| Rok vydání: | 2018 |
| Předmět: |
Gallium nitride
02 engineering and technology 010402 general chemistry 01 natural sciences Biochemistry Catalysis Thermal expansion law.invention chemistry.chemical_compound symbols.namesake Colloid and Surface Chemistry law Growth rate Diode Graphene business.industry General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences chemistry Sapphire symbols Optoelectronics 0210 nano-technology business Raman spectroscopy Light-emitting diode |
| Zdroj: | Journal of the American Chemical Society. 140:11935-11941 |
| ISSN: | 1520-5126 0002-7863 |
| Popis: | We study the roles of graphene acting as a buffer layer for growth of an AlN film on a sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries. The graphene interlayer also weakens the interaction between AlN and sapphire and accommodates their large mismatch in the lattice and thermal expansion coefficients; thus, the compressive strain in AlN and the tensile strain in sapphire are largely relaxed. The effective relaxation of strain further leads to a low density of defects in the AlN films. These findings reveal the roles of graphene in III-nitride growth and offer valuable insights into the efficient applications of graphene in the light-emitting diode industry. |
| Databáze: | OpenAIRE |
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