Sensitivity analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
| Autor: | Francisco Pasadas, Giovanni Spinelli, Vincenzo Tucci, Patrizia Lamberti, David Jiménez |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Electron mobility
Materials science Fabrication General Computer Science Design of experiment G-FET Graphene Sensitivity analysis FOS: Physical sciences 010103 numerical & computational mathematics 02 engineering and technology 7. Clean energy 01 natural sciences Theoretical Computer Science law.invention Reliability (semiconductor) law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Sensitivity (control systems) Electronics 0101 mathematics Numerical Analysis Condensed Matter - Mesoscale and Nanoscale Physics business.industry Applied Mathematics Design of experiments Transistor Modeling and Simulation Optoelectronics 020201 artificial intelligence & image processing business |
| Zdroj: | Mathematics and Computers in Simulation. 183:187-197 |
| ISSN: | 0378-4754 |
| DOI: | 10.1016/j.matcom.2020.06.005 |
| Popis: | Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on graphene-based field-effect transistors (GFETs) has rapidly increased in the last years. However, despite the continuous progress in the optimization of such devices many critical issues remain to be solved such as their reproducibility and performance uniformity against possible variations originated by the manufacturing processes or the operating conditions. In the present work, changes of the ID-VDS characteristics of a Graphene Field-Effect Transistors, caused by a tolerance of 10% in the active channel (i.e. its length and width) and in the top oxide thickness are numerically investigated in order to assess the reliability of such devices. Design of Experiments (DoE) is adopted with the aim to identify the most influential factors on the electrical performance of the device, so that the fabrication process may be suitably optimized. Comment: 13 pages,8 figures, 2 tables |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect