Luminescence study of GaN-based vertical light emitting diodes

Autor:	Jaejin Lee, N. D. Lam, Manh-Ha Doan, Fabian Rotermund, H. Lim
Předmět:	Materials science Photoluminescence business.industry Carrier lifetime law.invention law Transmission electron microscopy Microscopy Sapphire Optoelectronics Thin film Luminescence business Light-emitting diode
Zdroj:	Scopus-Elsevier
Popis:	Luminescence and structural properties of InGaN/GaN LED structure before and after removing the sapphire substrates were investigated by photoluminescence, cathodeluminescence, carrier lifetime measurements, and high-resolution transmission electron microscopy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4763d04335c8d0cd25757ceb9b987ac http://www.scopus.com/inward/record.url?eid=2-s2.0-84897811100&partnerID=MN8TOARS Zobrazit plný text záznamu