HVPE of scandium nitride on 6H–SiC(0001)

Autor:	T. Bohnen, P.R. Hageman, James H. Edgar
Rok vydání:	2008
Předmět:	Applied Materials Science Materials science Hydride Inorganic chemistry chemistry.chemical_element Substrate (electronics) Nitride Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound chemistry Impurity Materials Chemistry Aluminium oxide Scandium Thin film
Zdroj:	Journal of Crystal Growth, 310, 6, pp. 1075-1080 Journal of Crystal Growth, 310, 1075-1080
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2007.12.053
Popis:	The epitaxy of scandium nitride deposited by hydride vapor phase epitaxy on 6H–SiC(0 0 0 1) substrates is reported. The structure and composition of the deposited films were dependent on both the scandium metal source and substrate temperatures. At substrate temperatures between 800 and 900 °C, the ScN exhibited a single (1 1 1) orientation. At substrate temperatures of 1000 °C and above, the films were mixtures of (1 0 0) and (1 1 1) orientations. Aluminum was detected by EDAX in the ScN films when the scandium source temperature was greater than 900 °C, presumably due to the reaction between scandium and the alumina reactor tube. Chlorine was detected in the films, and its concentration increased as the scandium source temperature was decreased from 1000 to 800 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f474f8f2a49be5a72d18e9cb13c6baca https://doi.org/10.1016/j.jcrysgro.2007.12.053 Zobrazit plný text záznamu Full Text from ScienceDirect