X-ray lithography
| Autor: | A. Heuberger |
|---|---|
| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 1988 |
| Předmět: |
Production line
Depth of focus Fabrication X-ray resist Computer science X-ray lithography Microelectronics Electrical and Electronic Engineering Throughput (business) Lithography compact storage ring Very-large-scale integration Kompaktspeicherring business.industry General Engineering mask technology Condensed Matter Physics Chip Engineering physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Röntgenlithographie Semiconductor Resist Maskentechnologie Röntgenresist business Storage ring |
| Popis: | X-ray lithography with wavelengths between 0.2 nm and 5 nm provides both high structural resolution as good as 0.1 μm and a wide scope of advantages for the application in circuit production. Examples for this better process performance compared to optical techniques are: lower particle and dust sensitivity, applicability of simple single-layer resist technique, high depth of focus without any influence of substrate material and chip topography and presumably the highest throughput of all lithography methods which are able to go into the submicron range. However, the introduction of X-ray lithography into the semiconductor production means a revolutionary change of production technology. This begins with a completely different mask technology which makes, for example, the classical separation of mask substrate fabrication from pattern generation by different manufacturers very problematical and ends with the necessity to introduce X-ray lithography in relatively large production capacity units consisting of a larger number of X-ray steppers. The latter is caused by the fact that a storage ring - even in the smallest version, e.g. COSY - has to supply up to 10 X-ray steppers with light in order to clearly beat the optical techniques with respect to throughput and lower cost level. But, on the other hand, X-ray lithography provides a relatively good chance to win significant advantages in the worlwide semiconductor competition, especially for those who venture to start early with this new technology. To mention only one example, using X-ray lithography can possibly slow down the crazy spiral of future clean room demands. To prove such statements in pilot production lines, the necessary tools and components for X-ray lithography are already or will be available for the first time on a commercial basis in the very near future. Especially steppers, sources and resists with satisfying specifications have been announced by a growing number of vendors. The most critical problem at present is the mask technology and the tools for defect elimination. However, with the existing technologies, the requirements for 0.5 μm design-rules will be met very soon on a pilot scale. The first commercial suppliers of X-ray masks are now preparing for their production technologies. It seems probable that X-ray lithography can be established as a standard production tool at the beginning of the nineties. |
| Databáze: | OpenAIRE |
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