Transient photoreflectance of AlInN/GaN heterostructures
| Autor: | Remis Gaska, Vytautas Liuolia, Daniel Billingsley, Saulius Marcinkevicius, Michael Shur, Maxim S. Shatalov, Jinwei Yang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
III-V semiconductors localised states Band gap General Physics and Astronomy time resolved spectra 02 engineering and technology 01 natural sciences Condensed Matter::Materials Science Electric field 0103 physical sciences semiconductor heterojunctions 010302 applied physics Condensed matter physics wide band gap semiconductors business.industry carrier relaxation time Relaxation (NMR) Wide-bandgap semiconductor photoreflectance Heterojunction aluminium compounds 021001 nanoscience & nanotechnology Condensed Matter Physics lcsh:QC1-999 Photoexcitation indium compounds energy gap photoexcitation Modulation Optoelectronics gallium compounds 0210 nano-technology business Ultrashort pulse Den kondenserade materiens fysik lcsh:Physics |
| Zdroj: | AIP Advances, Vol 2, Iss 4, Pp 042148-042148-7 (2012) |
| Popis: | Time-resolved photoreflectance (PR) in AlInN/GaN heterostructures was applied to study carrier dynamics at energies extending from the uniform AlInN alloy band gap to the band gap of GaN. PR at the AlInN band gap has been found to have subpicosecond decay. Such ultrafast carrier relaxation from the extended to the sub-band edge states implies that the localization sites are small and dense, most probably originating from the In-rich clusters. At energies below the AlInN band gap, a complicated energy dependence of the PR signal is attributed to the properties of the localized states and to the modulation of the interface electric field by photoexcitation. QC 20130109 |
| Databáze: | OpenAIRE |
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