Unlocking the full potential of light emitting field-effect transistors by engineering charge injection layers
| Autor: | Paul L. Burn, Ebinazar B. Namdas, Paul Meredith, Kristen Tandy, Mujeeb Ullah |
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| Rok vydání: | 2013 |
| Předmět: |
Fabrication
Materials science 02 engineering and technology Electron 010402 general chemistry 7. Clean energy 01 natural sciences law.invention Biomaterials law Materials Chemistry OLED Work function Electrical and Electronic Engineering Diode business.industry Transistor General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Electrode Optoelectronics Field-effect transistor 0210 nano-technology business |
| Zdroj: | Organic Electronics. 14:2953-2961 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2013.08.013 |
| Popis: | Light emitting field-effect transistors (LEFETs) are a class of next generation devices which combine the switching properties of field-effect transistors (FETs) with light emitting capabilities of organic light-emitting diodes (OLEDs) in a single device architecture. Current LEFET architectures suffer from inefficient charge injection of electrons and holes from the source and drain electrodes, leading to unbalanced charge transport and hence poor device performance. Here we report a simple fabrication method for LEFETs that delivers asymmetric source and drain electrodes comprised of low and high work function materials. The interdigitated low and high work function source–drain electrodes consist of combinations of organic materials, salts, metal oxides and metals. Using this method we were able to obtain a maximum EQE of up to 1.2% in a single layer device with Super Yellow as the active material. |
| Databáze: | OpenAIRE |
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