XPS study of photo- and thermally-induced changes in amorphous Ge As40−S60
| Autor: | V. Pamukchieva, M.-F. Guimon, D. Arsova, R. Dedryvere, E. Skordeva, D. Gonbeau |
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| Přispěvatelé: | LABORATOIRE DE CHIMIE THEORIQUE ET PHYSICO-CHIMIE MOLECULAIRE (LCTPCM), Université de Pau et des Pays de l'Adour (UPPA)-Centre National de la Recherche Scientifique (CNRS), Institut des sciences analytiques et de physico-chimie pour l'environnement et les materiaux (IPREM), Université de Pau et des Pays de l'Adour (UPPA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2006 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Analytical chemistry [CHIM.MATE]Chemical Sciences/Material chemistry 02 engineering and technology Electronic structure 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Spectral line Electronic Optical and Magnetic Materials Amorphous solid Condensed Matter::Materials Science X-ray photoelectron spectroscopy 0103 physical sciences Valence band Electrical and Electronic Engineering Thin film 0210 nano-technology Chemical composition |
| Zdroj: | Physica B: Condensed Matter Physica B: Condensed Matter, Elsevier, 2006, 371 (2), pp.302-308. ⟨10.1016/j.physb.2005.10.133⟩ |
| ISSN: | 0921-4526 |
| Popis: | cited By 8; International audience; The electronic structure of GexAs40- xS60 glasses and amorphous films has been obtained by means of X-ray photoelectron spectroscopy. Core level peaks and valence band spectra in the dependence on the composition as well as on structural changes initiated by illumination and/or annealing have been investigated and discussed. © 2005 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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