Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories
| Autor: | P. Canet, V. Della Marca, J.-L. Ogier, G. Just, Jérémy Postel-Pellerin |
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| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Rousset] (ST-ROUSSET), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU) |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Engineering
Hardware_MEMORYSTRUCTURES business.industry Energy consumption Condensed Matter Physics 7. Clean energy Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Flash (photography) [SPI]Engineering Sciences [physics] Electronic engineering Figure of merit Node (circuits) Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Safety Risk Reliability and Quality business Cell aging Protocol (object-oriented programming) ComputingMilieux_MISCELLANEOUS Degradation (telecommunications) Communication channel |
| Zdroj: | Microelectronics Reliability Microelectronics Reliability, 2014, 54 (9-10), pp.2262-2265. ⟨10.1016/j.microrel.2014.07.063⟩ Microelectronics Reliability, Elsevier, 2014, 54 (9-10), pp.2262-2265. ⟨10.1016/j.microrel.2014.07.063⟩ |
| ISSN: | 0026-2714 |
| Popis: | In this paper the impact of the endurance degradation on the programming window and the energy consumption of flash floating gate memories is investigated. Using a new measurement technique we characterized the evolution of the dynamic drain current during the channel hot electron programming through the cycling. This experimental method has been developed for 90 nm technology node flash floating gate memories, but it is fully compatible with the highly scaled devices. We define the programming efficiency as a new figure of merit to evaluate the performances of flash memories and we demonstrate why this decreases during the cell aging. Moreover we confirm that the efficiency optimization point varies with the cell degradation. Finally, with a complete set of measurements, we show that our experimental protocol enables the understanding of the role of defects generation on the programming efficiency of NOR flash memories for embedded low energy applications. |
| Databáze: | OpenAIRE |
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