Antimony Doping in Solution-processed Cu2ZnSn(S,Se)4Solar Cells
| Autor: | Dongchuan Fu, Sudip Kumar Batabyal, Cheng Hon Alfred Huan, Kong Fai Tai, Lydia Helena Wong, Sing Yang Chiam |
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| Rok vydání: | 2015 |
| Předmět: |
Antimony
Photoluminescence Materials science General Chemical Engineering Inorganic chemistry chemistry.chemical_element Sulfides engineering.material Selenium symbols.namesake Electric Power Supplies Solar Energy Environmental Chemistry General Materials Science Kesterite Equivalent series resistance Doping Grain size Solutions Zinc General Energy chemistry Tin engineering symbols Ethylene Glycols Raman spectroscopy Copper |
| Zdroj: | ChemSusChem. 8:3504-3511 |
| ISSN: | 1864-5631 |
| DOI: | 10.1002/cssc.201500433 |
| Popis: | Kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) is obtained using a facile precursor-solution method followed by selenization. Power-conversion efficiency of 6.0 % is achieved and further improved to 8.2 % after doping the absorber with 0.5 mol % Sb. XRD and Raman spectroscopy show similar characteristics for the undoped and doped CZTSSe. Increasing the Sb concentration increases the grain size and lowers the series resistance. However, further Sb doping beyond 0.5 mol % degrades device performance due to lower open-circuit voltage (and therefore lower fill factor). The effect of Sb doping and the doping concentration are investigated by power-dependent and temperature-dependent photoluminescence studies, revealing that trap density is significant reduced with 0.5 mol % Sb doping. Additional doping beyond 0.5 mol % creates more defects that quench the photoexcited carriers and decrease the open-circuit voltage. |
| Databáze: | OpenAIRE |
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