Optical properties of small GaN-Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
| Autor: | Bernard Gil, Benjamin Damilano, Daniel Rosales, Julien Selles, Guillaume Cassabois, Jean Massies, Julien Brault, Philippe Vennéguès, Thierry Guillet, Philippe De Mierry |
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| Přispěvatelé: | Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Labex Ganex |
| Rok vydání: | 2015 |
| Předmět: |
Photoluminescence
Materials science quantum confined Stark effect business.industry Quantum-confined Stark effect Gallium nitride Epitaxy GaN Condensed Matter::Materials Science chemistry.chemical_compound chemistry AlGaN molecular beam epitaxy Quantum dot UV LEDs [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] Sapphire Optoelectronics Metalorganic vapour phase epitaxy business self-assembled nanostructures polar and semi-polar orientations Molecular beam epitaxy |
| Zdroj: | Proceedings of SPIE GALLIUM NITRIDE MATERIALS AND DEVICES X GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, San Francisco, United States. pp.93630Z, ⟨10.1117/12.2076284⟩ |
| ISSN: | 0277-786X |
| Popis: | GaN-Al0.5NGa0.5N quantum dots deposited on (11-22) planes have been grown by combining Molecular Beam Epitaxy and Metal Organic Vapour Phase Epitaxy. This combination is interesting for realization of ultraviolet operation light emitting diodes, lasers andsingle photon sources,… (1,3) The growth of dots was achieved by MBE using ammonia as nitrogen precursor and growth interruption in ammonia less conditions to trigger corrugation of GaN and dot formation (4). The (11-22) GaN oriented peudosubstrate was realized by MOVPE starting from a M-plane oriented sapphire substrate. The orientation of the growth plane dictates in-plane anisotropies which are effectively found leading to a transition from isolated dots to nanochains - oriented along the direction as evidenced from Atomic Force Microscopy features or optical properties: polarization rates and temperature dependent measurements of the radiative recombination process for instance(5). We here restrict to small size isolated quantum dots and present innovative optical properties among which are micro-photoluminescence data versus pump power, polarization of the emitted photons at different temperatures. We also analyse the photoluminescence decay times and model our finding in the context of the effective mass approximation. The crystal field splitting is measured in Al 0.5NGa 0.5N lattice-matched to (11-2) oriented GaN by polarized microphotoluminecence under high photo- injection conditions. |
| Databáze: | OpenAIRE |
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