Fast Active Quenching Circuit for Reducing Avalanche Charge and Afterpulsing in InGaAs/InP Single-Photon Avalanche Diode
| Autor: | Alberto Tosi, Adriano Della Frera, F. Zappa, Fabio Acerbi |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Quenching
Materials science Avalanche diode sezele Physics::Instrumentation and Detectors business.industry High Energy Physics::Lattice Detector Condensed Matter Physics Avalanche photodiode Atomic and Molecular Physics and Optics Computer Science::Hardware Architecture chemistry.chemical_compound Computer Science::Emerging Technologies chemistry Single-photon avalanche diode Optoelectronics Electrical and Electronic Engineering business Indium gallium arsenide Diode Electronic circuit |
| Zdroj: | IEEE Journal of Quantum Electronics. 49:563-569 |
| ISSN: | 1558-1713 0018-9197 |
| DOI: | 10.1109/jqe.2013.2260726 |
| Popis: | We characterize three different quenching circuits for InGaAs/InP single-photon avalanche diodes (SPADs) operated in gated mode: i) a simple passive quenching circuit; ii) an active quenching circuit; and iii) a fast active quenching circuit. For each of these, we acquire the shape of the avalanche current, at different excess biases, by reconstructing the waveform of the photons emitted from the detector during an avalanche and we simultaneously measure the afterpulsing probability and the dependence of dark count rate on gate period (to estimate the maximum count rate). We prove that the avalanche charge reduction is in agreement with the reduction of afterpulsing probability, giving a four-time decrease in afterpulsing when employing the fast active quenching circuit compared to the simple passive quenching circuit. |
| Databáze: | OpenAIRE |
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