Field‐Effect Transistors Based on Formamidinium Tin Triiodide Perovskite
| Autor: | Matteo Pitaro, Giuseppe Portale, Simon Kahmann, Wytse Talsma, Jingjin Dong, Shuyan Shao, Alexander J. Rommens, Maria Antonietta Loi |
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| Přispěvatelé: | Photophysics and OptoElectronics, Macromolecular Chemistry & New Polymeric Materials |
| Rok vydání: | 2021 |
| Předmět: |
Electron mobility
Materials science business.industry Doping field-effect transistor chemistry.chemical_element hole mobility Condensed Matter Physics Electronic Optical and Magnetic Materials Threshold voltage Biomaterials chemistry.chemical_compound Formamidinium 3D tin perovskite chemistry dedoping formamidinium tin triiodide Electrochemistry Optoelectronics Field-effect transistor Triiodide Tin business Perovskite (structure) |
| Zdroj: | Advanced Functional Materials, 31(11):2008478. WILEY-V C H VERLAG GMBH |
| ISSN: | 1616-3028 1616-301X |
| DOI: | 10.1002/adfm.202008478 |
| Popis: | To date, there are no reports of 3D tin perovskite being used as a semiconducting channel in field-effect transistors (FETs). This is probably due to the large amount of trap states and high p-doping typical of this material. Here, the first top-gate bottom-contact FET using formamidinium tin triiodide perovskite films is reported as a semiconducting channel. These FET devices show a hole mobility of up to 0.21 cm(2) V-1 s(-1), an I-ON/OFF ratio of 10(4), and a relatively small threshold voltage (V-TH) of 2.8 V. Besides the device geometry, the key factor explaining this performance is the reduced doping level of the active layer. In fact, by adding a small amount of the 2D material in the 3D tin perovskite, the crystallinity of FASnI(3) is enhanced, and the trap density and hole carrier density are reduced by one order of magnitude. Importantly, these transistors show enhanced parameters after 20 months of storage in a N-2 atmosphere. |
| Databáze: | OpenAIRE |
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