Optical properties of functionalized GaN nanowires
| Autor: | Per-Olof Holtz, Plamen Paskov, Kuei-Hsien Chen, Chun-Chiang Kuo, Li-Chyong Chen, Chih-Wei Hsu, Abhijit Ganguly, Chin-Pei Chen |
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| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Photoluminescence Passivation business.industry Nanowire Wide-bandgap semiconductor General Physics and Astronomy TEKNIKVETENSKAP Characterization (materials science) symbols.namesake symbols Optoelectronics Surface modification TECHNOLOGY business Raman spectroscopy Surface states |
| Popis: | The evolution of the optical properties of GaN nanowires (NWs) with respect to a sequence of surface functionalization processes is reported; from pristine hydroxylated to finally, 3-mercaptopropyltrimethoxysilane (MPTMS) functionalized GaN NWs. Photoluminescence, Raman, stationary, and time-resolved photoluminescence measurements were applied to investigate the GaN NWs with different surface conditions. A documented surface passivation effect of the GaN NWs induced by the MPTMS functionalization is determined based on our characterization results. A hypothesis associated with the surface band bending and the defect levels near the band edges is proposed to explain the observed experimental results. Original Publication:Chih-Wei Hsu, Abhijit Ganguly, Chin-Pei Chen, Chun-Chiang Kuo, Plamen Paskov, Per-Olof Holtz, Li-Chyong Chen and Kuei-Hsien Chen, Optical properties of functionalized GaN nanowires, 2011, JOURNAL OF APPLIED PHYSICS, (109), 5, 053523.http://dx.doi.org/10.1063/1.3552919Copyright: American Institute of Physicshttp://www.aip.org/ |
| Databáze: | OpenAIRE |
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