Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices
| Autor: | Lynne Gignac, Jeffrey W. Sleight, Guy M. Cohen, Sarunya Bangsaruntip, S. Mittal |
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| Rok vydání: | 2011 |
| Předmět: |
Ions
Silicon Materials science Nanowires business.industry Analytical chemistry Nanowire chemistry.chemical_element Electrons Focused ion beam Specimen Handling Micromanipulation Semiconductor Microscopy Electron Transmission Semiconductors chemistry Transmission electron microscopy Microscopy Perpendicular Nanotechnology Optoelectronics Field-effect transistor business Instrumentation |
| Zdroj: | Microscopy and Microanalysis. 17:889-895 |
| ISSN: | 1435-8115 1431-9276 |
| Popis: | The ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart. |
| Databáze: | OpenAIRE |
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