Feasibility study on 3-D shape analysis of high-aspect-ratio features using through-focus scanning optical microscopy
| Autor: | Benjamin Bunday, Ravi Kiran Attota, John A. Kramar, Victor Vartanian, Peter Weck |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
3D optical data storage
business.industry Computer science Scanning electron microscope 02 engineering and technology TSOM 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Article Metrology law.invention 010309 optics Optics Nanometrology Optical microscope law 0103 physical sciences Wafer 0210 nano-technology business Shape analysis (digital geometry) |
| Popis: | In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. Metrology and process control of three-dimensional (3-D) high-aspect-ratio (HAR) features are becoming increasingly important and also challenging. In this paper we present a feasibility study of through-focus scanning optical microscopy (TSOM) for 3-D shape analysis of HAR features. TSOM makes use of 3-D optical data collected using a conventional optical microscope for 3-D shape analysis. Simulation results of trenches and holes down to the 11 nm node are presented. The ability of TSOM to analyze an array of HAR features or a single isolated HAR feature is also presented. This allows for the use of targets with area over 100 times smaller than that of conventional gratings, saving valuable real estate on the wafers. Indications are that the sensitivity of TSOM may match or exceed the International Technology Roadmap for Semiconductors (ITRS) measurement requirements for the next several years. Both simulations and preliminary experimental results are presented. The simplicity, lowcost, high throughput, and nanometer scale 3-D shape sensitivity of TSOM make it an attractive inspection and process monitoring solution for nanomanufacturing. |
| Databáze: | OpenAIRE |
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