BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits
| Autor: | Diego Mateo, Josep Altet, Ferran Reverter, Enrique Barajas, Xavier Perpiñà, Alexandre Billong, Xavier Aragones |
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| Přispěvatelé: | Ministerio de Ciencia, Innovación y Universidades (España), Agencia Estatal de Investigación (España), Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions, Universitat Politècnica de Catalunya. e-CAT - Circuits i Transductors Electrònics |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
CMOS built-in sensor Circuits electrònics Enginyeria electrònica::Circuits electrònics [Àrees temàtiques de la UPC] Topology (electrical circuits) 02 engineering and technology Integrated circuit Hardware_PERFORMANCEANDRELIABILITY lcsh:Chemical technology 01 natural sciences Biochemistry Article Analytical Chemistry law.invention CMOS thermal sensor Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors [Àrees temàtiques de la UPC] law Hardware_GENERAL Electronic circuits 0202 electrical engineering electronic engineering information engineering Hardware_INTEGRATEDCIRCUITS lcsh:TP1-1185 Electrical and Electronic Engineering Instrumentation Electronic circuit built-in test and measurement business.industry Amplifier 020208 electrical & electronic engineering 010401 analytical chemistry Transistor Measurement of RF CMOS circuits Electrical engineering measurement of RF CMOS circuits Detectors CMOS integrated circuits Atomic and Molecular Physics and Optics 0104 chemical sciences Built-in test and measurement CMOS Voltmeter business Voltage Hardware_LOGICDESIGN |
| Zdroj: | Sensors, Vol 21, Iss 805, p 805 (2021) UPCommons. Portal del coneixement obert de la UPC Universitat Politècnica de Catalunya (UPC) Sensors (Basel, Switzerland) Digital.CSIC. Repositorio Institucional del CSIC instname Sensors Volume 21 Issue 3 |
| ISSN: | 1424-8220 |
| Popis: | © 2021 by the authors. A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metal-oxide-semiconductor (MOS) transistor acting as temperature transducer, which was placed near the circuit to monitor, and an active band-pass filter amplifier. For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. First, using the MOS dissipating devices, the performance and limitations of the different blocks that constitute the temperature sensor were characterized. Second, by using the heterodyne technique (applying two nearby tones) to the power amplifier (PA) and connecting the sensor output voltage to a low-cost AC voltmeter, the PA’s output power and its central frequency were monitored. As a result, this topology resulted in a low-cost approach, with high linearity and sensitivity, for RF-IC testing and variability monitoring. This research was funded by Spanish AEI–Agencia Estatal de Investigación–grant number PID2019-103869RB-C33. (X.P.) has also received founds from the Spanish Ministry of Science, Innovation and Universities through Agencia Estatal de Investigación (AEI) (projects: HIPERCELLS, RTI2018-098392B-I00, and “Fiabilidad Inteligente”, PCI2020-112028). |
| Databáze: | OpenAIRE |
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