Beam test results of a 16ps timing system based on ultra-fast silicon detectors
| Autor: | V. Sola, N. Cartiglia, R. Mulargia, Natasha Lee Woods, Salvador Hidalgo, S. Durando, M. Carulla, M. Zavrtanik, Maria Margherita Obertino, M. Mikuž, A. Zatserklyaniy, H. M. X. Grabas, Angel Merlos, Francesca Cenna, Roberto Cirio, M.I. Ferrero, Igor Mandić, Andrea Bellora, Giulio Pellegrini, Amedeo Staiano, Z. Luce, Roberto Sacchi, Vladimir Cindro, R. Losakul, Vitaliy Fadeyev, Gregor Kramberger, F. McKinney-Martinez, Fabio Ravera, Hartmut Sadrozinski, P. Freeman, Z. Galloway, David Flores, C. Labitan, V. Monaco, M. Mandurrino, David Quirion, A. Seiden, Evangelos Gkougkousis, E.N. Spencer, Roberta Arcidiacono, M. Wilder, N. Minafra, B. Gruey |
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| Rok vydání: | 2017 |
| Předmět: |
Nuclear and High Energy Physics
Physics - Instrumentation and Detectors Silicon Bar (music) FOS: Physical sciences chemistry.chemical_element 01 natural sciences Particle detector High Energy Physics - Experiment High Energy Physics - Experiment (hep-ex) Silicon photomultiplier Optics 0103 physical sciences Detectors and Experimental Techniques 010306 general physics Instrumentation physics.ins-det Physics 010308 nuclear & particles physics business.industry hep-ex Detector Biasing Instrumentation and Detectors (physics.ins-det) Semiconductor detector Advanced hybrid pixel detectors [7] chemistry business Beam (structure) Particle Physics - Experiment |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Nucl. Instrum. Methods Phys. Res., A, (2017) pp. 83-88 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/j.nima.2017.01.021 |
| Popis: | In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 {\mu}m) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V. Comment: 7 pages, 8 figures, 1 table, Subm. to NIM A |
| Databáze: | OpenAIRE |
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