Heat-spreading diamond films for GaN-based high-power transistor devices

Autor:	P. Meisen, Helmut Leier, Andrei Vescan, P. Koidl, M. Seelmann-Eggebert, F. Schaudel
Přispěvatelé:	Publica
Jazyk:	angličtina
Rok vydání:	2001
Předmět:	device modeling Materials science nucleation Nucleation Gallium nitride Nukleation engineering.material thermische Simulation GaN chemistry.chemical_compound Thermal conductivity low temperature deposition Materials Chemistry Power semiconductor device Electrical and Electronic Engineering Heat spreading Thermal simulation business.industry Mechanical Engineering Diamond FET General Chemistry Electronic Optical and Magnetic Materials chemistry Niedertemperaturabscheidung Compatibility (mechanics) Diamantfilm engineering Optoelectronics Field-effect transistor processing diamond film Metal Semiconductor Field-Effect Transistor (MESFET) business
Popis:	We discuss the potential of heat-spreading films with respect to improving the performance of thermally limited high-power high-frequency GaN-FET devices and report on successful diamond deposition on GaN-FETs. Detailed conditions for process compatibility with GaN-FET technology are discussed and shown to be satisfied by the low-temperature deposition process developed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e11ec730b09d94a9e876d2c701966c65 https://publica.fraunhofer.de/handle/publica/199820 Zobrazit plný text záznamu