Structural, morphology and electrical properties of layered copper selenide thin film
| Autor: | K. Pah Lim, J. Ying Chyi Liew, Zainal Abidin Talib, Wan Mohd Daud Wan Yusoff, Zulkarnain Zainal, Mohd Maarof Abd. Moksin, Mat Yunus, W. Mahmood, Shaari Abdul Halim |
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| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Diffraction
grain size film thickness Materials science Morphology (linguistics) electrical conductivity Physics QC1-999 73.25.+i General Physics and Astronomy Substrate (electronics) 73.50.-h cuse thin films Grain size 73.21.ac 71.20.nr Ellipsometry Electrical resistivity and conductivity surface roughness Surface roughness Thin film Composite material 72.20.-i |
| Zdroj: | Open Physics, Vol 7, Iss 2, Pp 379-384 (2009) |
| ISSN: | 2391-5471 |
| Popis: | Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed. |
| Databáze: | OpenAIRE |
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