Area-Selective Atomic Layer Deposition Patterned by Electrohydrodynamic Jet Printing for Additive Manufacturing of Functional Materials and Devices
| Autor: | Orlando Trejo, Christopher Pannier, Tae H. Cho, Nazanin Farjam, Kira Barton, Rebecca L. Peterson, Mattison Rose, Eric Kazyak, Carli Huber, Neil P. Dasgupta, Christopher R. Allemang |
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| Rok vydání: | 2020 |
| Předmět: |
chemistry.chemical_classification
Auger electron spectroscopy Materials science business.industry Transistor General Engineering General Physics and Astronomy 02 engineering and technology Polymer 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Electrical contacts 0104 chemical sciences law.invention Atomic layer deposition Semiconductor Nanomanufacturing X-ray photoelectron spectroscopy chemistry law Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | ACS Nano. 14:17262-17272 |
| ISSN: | 1936-086X 1936-0851 |
| Popis: | There is an increasing interest in additive nanomanufacturing processes, which enable customizable patterning of functional materials and devices on a wide range of substrates. However, there are relatively few techniques with the ability to directly 3D print patterns of functional materials with sub-micron resolution. In this study, we demonstrate the use of additive electrohydrodynamic jet (e-jet) printing with an average line width of 312 nm, which acts as an inhibitor for area-selective atomic layer deposition (AS-ALD) of a range of metal oxides. We also demonstrate subtractive e-jet printing with solvent inks that dissolve polymer inhibitor layers in specific regions, which enables localized AS-ALD within those regions. The chemical selectivity and morphology of e-jet patterned polymers towards binary and ternary oxides of ZnO, Al2O3, and SnO2 were quantified using X-ray photoelectron spectroscopy, atomic force microscopy, and Auger electron spectroscopy. This approach enables patterning of functional oxide semiconductors, insulators, and transparent conducting oxides with tunable composition, A-scale control of thickness, and sub-μm resolution in the x-y plane. Using a combination of additive and subtractive e-jet printing with AS-ALD, a thin-film transistor was fabricated using zinc-tin-oxide for the semiconductor channel and aluminum-doped zinc oxide as the source and drain electrical contacts. In the future, this technique can be used to print integrated electronics with sub-micron resolution on a variety of substrates. |
| Databáze: | OpenAIRE |
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