Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−xClx Film with Potassium Chloride Additives
| Autor: | Wenjie Kong, Jun Liu, Tingting Zhong, Fuchi Liu, Xiaoguang Liang, Kang Ling, C.M. Zhu, Fengzhen Lv |
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| Rok vydání: | 2020 |
| Předmět: |
KCl-doped MAPIC films
Materials science Tri-state resistive switching behavior Potassium Analytical chemistry chemistry.chemical_element Nanochemistry 02 engineering and technology Trapping 010402 general chemistry 01 natural sciences Electrical conduction Current conduction lcsh:TA401-492 General Materials Science Iodine vacancies Nano Express Trap-controlled SCLC conduction mechanism 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Indium tin oxide chemistry Resistive switching lcsh:Materials of engineering and construction. Mechanics of materials Resistive switching memory 0210 nano-technology |
| Zdroj: | Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020) Nanoscale Research Letters |
| ISSN: | 1556-276X |
| DOI: | 10.1186/s11671-020-03356-3 |
| Popis: | High-quality CH3NH3PbI 3−xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process. |
| Databáze: | OpenAIRE |
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