Influence of substrates and e-beam evaporation parameters on the microstructure of nanocrystalline and epitaxially grown Ti thin films
| Autor: | Matteo Ghidelli, Hanna Bishara, Vivek Devulapalli, Christian Liebscher, Gerhard Dehm |
|---|---|
| Přispěvatelé: | Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Gesellschaft, Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Institut Galilée-Université Sorbonne Paris Cité (USPC)-Centre National de la Recherche Scientifique (CNRS)-Université Sorbonne Paris Nord |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Analytical chemistry General Physics and Astronomy 02 engineering and technology Substrate (electronics) 010402 general chemistry Epitaxy 01 natural sciences [SPI.MAT]Engineering Sciences [physics]/Materials Titanium thin films Texture (crystalline) Thin film Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Evaporation (deposition) Nanocrystalline material Thin film resistivity 0104 chemical sciences Surfaces Coatings and Films Nanocrystalline titanium Epitaxial thin films Sapphire [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] E-beam evaporation 0210 nano-technology Electron backscatter diffraction |
| Zdroj: | Applied Surface Science Applied Surface Science, Elsevier, 2021, 562, pp.150194. ⟨10.1016/j.apsusc.2021.150194⟩ |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2021.150194⟩ |
| Popis: | Titanium thin films were deposited on silicon nitride (SiNx) coated Si, NaCl, and sapphire substrates varying the deposition conditions using e-beam evaporation to investigate thin film growth modes. The microstructure and texture evolution in dependence of substrate, deposition rate, film thickness, and substrate temperature were studied using X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Thin films obtained on SiNx and NaCl substrates were nanocrystalline, while the films deposited on sapphire transformed from nanocrystalline to single crystalline at deposition temperatures above 200 °C. Predominantly, a surface plane orientation of (0002) was observed for the single crystalline films due to the minimization of surface energy. The orientation relationship of epitaxial single crystalline films grown on C-plane sapphire substrate is found to be (0002)Ti ‖ ( 0006 ) Sapphire , 〈 11 2 ¯ 0 〉 Ti ‖ 〈 03 3 ¯ 0 〉 Sapphire . In this orientation relationship, both the total surface and strain energy of the film are minimized. The results were complemented by resistivity measurements using the four-point probe method reporting an increase from ~ 60 μ Ω cm to ~ 95 μ Ω cm for single crystalline and nanocrystalline films, respectively. |
| Databáze: | OpenAIRE |
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