Simulation of SOFC stack and repeat elements including interconnect degradation and anode reoxidation risk
| Autor: | J. Van herle, Diego Larrain, Daniel Favrat |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Interconnection
Engineering interconnect Renewable Energy Sustainability and the Environment Thermodynamic equilibrium business.industry Nuclear engineering Oxide Energy Engineering and Power Technology modeling Anode chemistry.chemical_compound Reliability (semiconductor) Stack (abstract data type) chemistry Electronic engineering Degradation (geology) SOFC Electrical and Electronic Engineering Physical and Theoretical Chemistry business Current density degradation |
| Zdroj: | Journal of Power Sources. 161:392-403 |
| ISSN: | 0378-7753 |
| Popis: | Reliability of SOFC stacks is a complex and key issue. This paper presents a simulation study including some degradation processes, namely interconnect degradation and the anode reoxidation potential. Quantification for these phenomena has been included in a repeat element model to simulate stack degradation and study the influence of design and operating parameters on the degradation. Interconnect degradation is based on Wagner's law for oxide scale growth, parameters applying to metallic interconnects used in planar SOFCs are used. Anode reoxidation is modeled by thermodynamic equilibrium which allows identification of the operating conditions where the anode is likely to be reoxidized. Simulations have been carried out for a large number of cases at different current density, fuel utilization and furnace temperature, for two different stack designs (base case and modified design). Using an appropriate criterion to express degradation, all these cases point to a clear trade-off between interconnect degradation and local temperature. The base case design is likely to be exposed to anode reoxidation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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