Quantitative detection of anodic oxygen evolution on solid state sintered silicon carbide under near ECM conditions
| Autor: | Alexander Michaelis, Michael Schneider, L. Šimůnková, N. Junker |
|---|---|
| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Quenching
Materials science ECM Gas evolution reaction Oxide Oxygen evolution chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Electrochemistry 01 natural sciences Oxygen 0104 chemical sciences chemistry.chemical_compound chemistry Chemical engineering Silicon carbide General Materials Science Electrical and Electronic Engineering 0210 nano-technology Dissolution solid-state sintered (SiC) |
| Popis: | The present work examined the gas evolution on a solid-state sintered silicon carbide material (EKasic®D) at high anodic potentials (up to 120 V vs Ag/AgCl). By using the amperometric detection as well as the method of oxygen quenching, the part of anodic evolved oxygen could be determined for 75–95% of the total amount of consumed charge. The minor part of the total charge is consumed by oxide film formation (passive range) or material dissolution (transpassive range). |
| Databáze: | OpenAIRE |
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