Effects of Crystalline Disorder on Interfacial and Magnetic Properties of Sputtered Topological Insulator/Ferromagnet Heterostructures
Autor: | Nirjhar Bhattacharjee, Krishnamurthy Mahalingam, Adrian Fedorko, Alexandria Will-Cole, Jaehyeon Ryu, Michael Page, Michael McConney, Hui Fang, Don Heiman, Nian Xiang Sun |
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Rok vydání: | 2022 |
Předmět: |
Condensed Matter - Materials Science
Condensed Matter::Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Materials Chemistry Electrochemistry Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Electronic Optical and Magnetic Materials |
Zdroj: | ACS Applied Electronic Materials. 4:4288-4297 |
ISSN: | 2637-6113 |
DOI: | 10.1021/acsaelm.2c00523 |
Popis: | Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties of sputter-deposited TI/FM, Bi2Te3/Ni80Fe20, heterostructures is reported. Ni and a smaller amount of Fe from Py was found to diffuse across the interface and react with Bi2Te3. For highly crystalline c-axis oriented Bi2Te3 films, a giant enhancement in Gilbert damping is observed, accompanied by an effective out-of-plane magnetic anisotropy and enhanced damping-like spin-orbit torque (DL-SOT), possibly due to the topological surface states (TSS) of Bi2Te3. Furthermore, a spontaneous exchange bias is observed in hysteresis loop measurements at low temperatures. This is because of an antiferromagnetic topological interfacial layer formed by reaction of the diffused Ni with Bi2Te3 which couples with the FM, Ni80Fe20. For increasing disorder of Bi2Te3, a significant weakening of exchange interaction in the AFM interfacial layer is found. These experimental results Abstract length is one paragraph. |
Databáze: | OpenAIRE |
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