| Popis: |
A novel broadband RF front-end in 65nm CMOS technology is presented. The front-end serves to precondition the incoming RF spectrum for further processing in a cable TV receiver architecture where RF channel selection and down conversion are done in digital domain. The analog front-end consists of a broadband highly linear low-noise amplifier followed by a variable gain RF amplifier. An original broadband circuit topology for the amplifiers is adopted. The fabricated front-end exhibits a bandwidth of 50-1050MHz, a variable gain, which spans from 12 to 37dB with a 0.2dB step, an OIP3 of 28.4dBm (77.5dBmV), an OIP2 of 65dBm (114dBmV), and a noise figure of 5.8dB, dissipating 125mW at 1.2V supply, and a core silicon area of 0.4mm^2. |
