Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures
| Autor: | Georg Wolf, Mustafa Pinarbasi, Andrew D. Kent, Laura Rehm, B. Kardasz |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Condensed Matter - Mesoscale and Nanoscale Physics business.industry FOS: Physical sciences 02 engineering and technology Applied Physics (physics.app-ph) Physics - Applied Physics Nanosecond 021001 nanoscience & nanotechnology 01 natural sciences Switching time Tunnel magnetoresistance 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Perpendicular Optoelectronics Torque Nanometre 0210 nano-technology business Spin-½ Nanopillar |
| Popis: | Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration spin-transfer switching characteristics of perpendicular magnetic tunnel junction (pMTJ) nanopillar devices (40 to 60 nm in diameter) and contrast them to their room temperature properties. Interestingly, at fixed pulse voltage overdrive the characteristic switching time decreases with temperature, in contrast to macrospin model predictions, with the largest reduction in switching time occurring between room temperature and 150 K. The switching energy increases with decreasing temperature, but still compares very favorably to other types of spin-transfer devices at 4 K, with < 300 fJ required per switch. Write error rate (WER) measurements show highly reliable (WER 5 pages, 4 figures, 1 table, submitted to peer-reviewed journal |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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