Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination

Autor: Philippe Roncin, Paola Atkinson, Hocine Khemliche, Fabio Finocchi, A. Momeni, Maxime Debiossac, Victor H. Etgens, A. Zugarramurdi, Mahmoud Eddrief, Andrei G. Borisov
Přispěvatelé: Institut des Sciences Moléculaires d'Orsay (ISMO), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Croissance et propriétés de systèmes hybrides en couches minces (INSP-E8), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de minéralogie, cristallographie de Paris (LMCP), Université Pierre et Marie Curie - Paris 6 (UPMC)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des collisions atomiques et moléculaires (LCAM), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS)
Rok vydání: 2017
Předmět:
Zdroj: Applied Surface Science
Applied Surface Science, Elsevier, 2017, 391, pp.53-58. ⟨10.1016/j.apsusc.2016.02.157⟩
Applied Surface Science, 2017, 391, pp.53-58. ⟨10.1016/j.apsusc.2016.02.157⟩
ISSN: 0169-4332
Popis: Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology, and its ability to follow larger-scale changes in surface roughness during layer-by-layer growth. Recent experimental and theoretical results obtained for the He atom beam incident along the highly corrugated $[ 1\bar{1}0 ]$ direction of the $\beta_{2}$(2$\times$4) reconstructed GaAs(001) surface are summarized and complemented by the measurements and calculations for the beam incidence along the weakly corrugated [010] direction where a periodicity twice smaller as expected is observed. The combination of the experiment, quantum scattering matrix calculations, and semiclassical analysis allows in this case to reveal structural characteristics of the surface. For the in situ measurements of GIFAD during molecular beam epitaxy of GaAs on GaAs surface we analyse the change in elastic and inelastic contributions in the scattered beam, and the variation of the diffraction pattern in polar angle scattering. This analysis outlines the robustness, the simplicity and the richness of the GIFAD as a technique to monitor the layer-by-layer epitaxial growth.
Databáze: OpenAIRE