An Optical Diffuse Reflectance Model for the Characterization of a Si Wafer with an Evaporated SiO2 Layer
| Autor: | Sylwester Bargiel, Artur Zarzycki, Christophe Gorecki, Aurore Andrieux, July Galeano |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon dioxide thickness measurement 02 engineering and technology engineering.material lcsh:Chemical technology 01 natural sciences Biochemistry model inversion Analytical Chemistry chemistry.chemical_compound Coating 0103 physical sciences Wafer lcsh:TP1-1185 optical diffuse reflectance model Electrical and Electronic Engineering Thin film Instrumentation 010302 applied physics silicon wafer silicon dioxide business.industry Interaction model 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Characterization (materials science) thin-film chemistry engineering Optoelectronics Diffuse reflection 0210 nano-technology business Layer (electronics) |
| Zdroj: | Sensors Volume 19 Issue 4 Sensors, Vol 19, Iss 4, p 892 (2019) |
| ISSN: | 1424-8220 |
| DOI: | 10.3390/s19040892 |
| Popis: | Thin films are a type of coating that have a very wide spectrum of applications. They may be used as single layers or composed in multilayer stacks, which significantly extend their applications. One of the most commonly used material for thin films is silicon dioxide, SiO2. Although there are other tools that can be used to measure the thickness of SiO2 films, these tools are very complex and sophisticated. In this article, we propose the use of an exponential two-layer light-material interaction model, throughout its diffuse reflectance spectra, as an alternative for the measurement of the thickness of evaporated SiO2 on Si wafers. The proposed model is evaluated experimentally by means of a 980-nm-thick SiO2 layer evaporated on a Si wafer. The results show that the proposed model has a strong correlation with the thickness measurements obtained using commercial equipment. |
| Databáze: | OpenAIRE |
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