Microwave reflection measurement of critical currents in a nanotube Josephson transistor with a resistive environment
| Autor: | Christoph Strunk, Markus Gaass, Antti Paila, Pertti Hakonen, Lorenz Lechner, Mika Sillanpää |
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| Rok vydání: | 2011 |
| Předmět: |
Nanotube
Materials science Bioengineering Nanotechnology 02 engineering and technology Carbon nanotube 7. Clean energy 01 natural sciences law.invention Computer Science::Hardware Architecture law 0103 physical sciences General Materials Science Electrical and Electronic Engineering 010306 general physics Nanoscopic scale Superconductivity Resistive touchscreen Condensed matter physics Mechanical Engineering Transistor General Chemistry 021001 nanoscience & nanotechnology Inductance Reflection Magnitude Mechanics of Materials 0210 nano-technology |
| Zdroj: | Nanotechnology |
| ISSN: | 1361-6528 0957-4484 |
| Popis: | A scheme for measuring small intrinsic critical currents I(c) in nanoscale devices is described. Changes in Josephson inductance L(J) are converted to frequency variations that are recorded via microwave reflection measurements at 700-800 MHz. The critical current is determined from the frequency shift of the reflection magnitude at zero phase bias assuming a sinusoidal current-phase relation. The method is used to study a multiwalled carbon nanotube transistor with Pd/Nb contacts inside a resistive on-chip environment. We observe gate-tunable critical currents up to I(c) ∼ 8 nA corresponding to L(J)40 nH. The method presented is also applicable to devices shunted by closed superconducting loops. |
| Databáze: | OpenAIRE |
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