Aluminium-Doped Zinc Oxide Rear Reflectors for High-Efficiency Silicon Heterojunction Solar Cells
| Autor: | Christophe Ballif, Bertrand Paviet-Salomon, Gabriel Christmann, Sylvain Nicolay, Nicolas Badel, Laurie-Lou Senaud, Loris Barraud, Antoine Descoeudres, Jonas Geissbühler, Christophe Allebe, Matthieu Despeisse |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Plasmons
Materials science chemistry.chemical_element 02 engineering and technology Zinc 7. Clean energy 01 natural sciences Absorption Aluminium 0103 physical sciences Electrical and Electronic Engineering Absorption (electromagnetic radiation) Plasmon 010302 applied physics Equivalent series resistance business.industry Photovoltaic cells Doping Indium tin oxide 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Optical surface waves chemistry Metals Optoelectronics Optical losses 0210 nano-technology business Current density |
| Zdroj: | IEEE Journal of Photovoltaics |
| Popis: | This contribution demonstrates an improved infrared response of the rear reflector of monofacial silicon heterojunction solar cells using aluminium-doped zinc oxide (AZO) in lieu of indium tin oxide (ITO) in the back electron-collecting shell. Along these lines, the carrier concentration and the thickness of the rear AZO layer are optimized in order to minimize the free-carrier and the plasmonic absorption losses without detrimentally affecting the selectivity and the electrical transport properties of the device. The respective reductions of free-carrier vs. plasmonic absorption losses are thoroughly analyzed. Furthermore, the open-circuit voltage and series resistance of the solar cells are shown to not be impacted by the AZO thickness and the carrier concentration within the investigated ranges. As a result of these optimizations, a significant decrease in the parasitic absorption is obtained, leading to a champion device with a short-circuit current density of up to 40.81 mA/cm2 and an efficiency of 23.96 %, featuring a standard screen-printed silver grid at the front with ca. 3.25% optical shadowing. In summary, AZO appears to be a promising indium-free alternative material to replace the back ITO commonly used in silicon heterojunction solar cells. |
| Databáze: | OpenAIRE |
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