MAGNETOPOLARON EFFECT ON SILICON AND OXYGEN DONORS IN GAN

Autor:	S. S. Park, K. Y. Lee, David C. Look, Andrzej Wysmołek, R. Stępniewski, Jacek M. Baranowski, Marek Potemski, K. Pakuła, B. Chwalisz-Piętka
Rok vydání:	2007
Předmět:	Materials science Silicon Phonon Doping chemistry.chemical_element Resonance Statistical and Nonlinear Physics Gallium nitride Condensed Matter Physics chemistry.chemical_compound chemistry Excited state Atomic physics Luminescence Excitation
Zdroj:	Scopus-Elsevier
ISSN:	1793-6578 0217-9792
DOI:	10.1142/s0217979207043063
Popis:	Luminescence experiments in magnetic fields up to 28 T on a freestanding gallium nitride ( GaN ) sample and a heteroepitaxial GaN layer lightly doped with silicon are presented. In these samples, the principal D0X recombination channel is accompanied by two electron satellites (TES), which involve the excited donor states as well as by the longitudinal-optic (LO) phonon replica of the principal transitions. When the internal donor excitations are magnetically tuned into resonance with the LO-phonon excitation, the intensity of TES is strongly enhanced and clear avoided-crossings between the LO-phonon replica of the principal D0X transition and TES involving highly excited states of oxygen and silicon are resolved. The observed behavior is explained in terms of resonant interaction between LO-phonons and donor-bound electrons. It is found that the resonant magnetopolaron interaction is stronger for the oxygen as compared to the silicon donor.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfc3e1130e6fa0a890222b39234a67d9 https://doi.org/10.1142/s0217979207043063 Zobrazit plný text záznamu