High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization
Autor: | Federica Bondino, Martin Hulman, Peter Hutár, Edmund Dobročka, Roman Stoklas, Lenka Pribusová Slušná, M. Sojková, Frans Munnik, Igor Píš, Valéria Tašková |
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Rok vydání: | 2021 |
Předmět: |
Electron mobility
Materials science Fabrication epitaxial films FOS: Physical sciences General Physics and Astronomy Photodetector chemistry.chemical_element 02 engineering and technology 010402 general chemistry Epitaxy 01 natural sciences symbols.namesake Laue oscillations Condensed Matter - Materials Science Spintronics business.industry Charge carrier mobility Materials Science (cond-mat.mtrl-sci) Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films chemistry Epitaxial films Raman spectroscopy symbols Optoelectronics PtSe2 0210 nano-technology business Platinum |
Zdroj: | Applied Surface Science Applied Surface Science 538(2021), 147936 Applied surface science 538 (2021). doi:10.1016/j.apsusc.2020.147936 info:cnr-pdr/source/autori:Sojkova, Michaela; Dobrocka, Edmund; Hutar, Peter; Taskova, Valeria; Slusna, Lenka Pribusova; Stoklas, Roman; Pis, Igor; Bondino, Federica; Munnik, Frans; Hulman, Martin/titolo:High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization/doi:10.1016%2Fj.apsusc.2020.147936/rivista:Applied surface science/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume:538 |
ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2020.147936 |
Popis: | Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (600 {\deg}C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. Charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s in these films. |
Databáze: | OpenAIRE |
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