High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Autor: Federica Bondino, Martin Hulman, Peter Hutár, Edmund Dobročka, Roman Stoklas, Lenka Pribusová Slušná, M. Sojková, Frans Munnik, Igor Píš, Valéria Tašková
Rok vydání: 2021
Předmět:
Zdroj: Applied Surface Science
Applied Surface Science 538(2021), 147936
Applied surface science 538 (2021). doi:10.1016/j.apsusc.2020.147936
info:cnr-pdr/source/autori:Sojkova, Michaela; Dobrocka, Edmund; Hutar, Peter; Taskova, Valeria; Slusna, Lenka Pribusova; Stoklas, Roman; Pis, Igor; Bondino, Federica; Munnik, Frans; Hulman, Martin/titolo:High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization/doi:10.1016%2Fj.apsusc.2020.147936/rivista:Applied surface science/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume:538
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2020.147936
Popis: Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (600 {\deg}C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. Charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s in these films.
Databáze: OpenAIRE