Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

Autor:	Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Francesca Monforte, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro
Rok vydání:	2021
Předmět:	aluminum oxide atomic force microscopy nucleation atomic layer deposition interface states Materials Chemistry Electrochemistry dielectrics top gate transistors Electronic Optical and Magnetic Materials
Zdroj:	ACS Applied Electronic Materials. 4:406-415
ISSN:	2637-6113
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc96cba1884b269b26ef922250ac2acf https://doi.org/10.1021/acsaelm.1c01059 Zobrazit plný text záznamu