Numerical Analysis on Polarization-Induced Doping III-Nitride n-i-p Solar Cells

Autor: Yung Chi Yao, Ya Ju Lee, Zu Po Yang
Jazyk: angličtina
Rok vydání: 2015
Předmět:
Zdroj: IEEE Photonics Journal, Vol 7, Iss 1, Pp 1-9 (2015)
ISSN: 1943-0655
Popis: We design and numerically evaluate a new type of III-nitride n-i-p solar cells whose p- and n-type regions with equal carrier concentration of 3×10 18 cm -3 are not generated by extrinsic impurity doping but by the so-called polarization-induced doping, which is induced by the graded In x Ga 1-x N layers of linearly increasing (from x=0% to 30%) and decreasing (from x=30% to 0%) the indium composition to construct the conductive p- and n-type regions, respectively. Because of the identical and uniform polarization charges within each unit cell, a smooth spatial variation of potential profile of the device is hence expected, which mitigates the energy band discontinuities at hetero-interfaces, and facilitates transportation and collection of photogenerated carriers with high efficiency. Most importantly, as the conductive n- and p-type regions are formed by electrostatic field ionization but not by the thermal activation, the concentration of field-induced carriers is independent of thermal freezeout effects. Thus the polarization-induced doping III-nitride n-i-p solar cells can provide stable power conversion efficiency, even when operated at low temperatures. Index Terms: Polarization-induced doping, III-nitride, n-i-p solar cells, wurtzite structure.
Databáze: OpenAIRE