Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode
Autor: | İlke Taşçıoğlu, E. Yağlıoğlu, Ö. Tüzün Özmen, H. M. Şağban, Ş. Altındal |
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Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: |
Materials science
Analytical chemistry 02 engineering and technology Substrate (electronics) Dielectric Organic film frequency and voltage dependence 01 natural sciences Capacitance Electrical resistivity and conductivity 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 010302 applied physics electrical conductivity business.industry Schottky diode 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Dissipation factor Dielectric loss 0210 nano-technology business density of interface states |
Popis: | Taşçıoğlu, İlke (Arel Author) In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements in the frequency range of 10 kHz-2 MHz. The C-V-f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states (N (ss)). The values of N (ss) located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant (epsilon') and dielectric loss (epsilon aEuro(3)) decrease with increasing frequency, whereas loss tangent (tan delta) remains nearly the same. The decrease in epsilon' and epsilon aEuro(3) was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity (sigma (ac)) and electric modulus (M' and MaEuro(3)) increase with increasing frequency. |
Databáze: | OpenAIRE |
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