| Autor: |
Rahul Magoon, Florian Bohn, Jeff Zachan, Donald Mcclymont, S. Kee, Ali Hajimiri, Ichiro Aoki, R. Aparicio, Geoff Hatcher |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of Solid-State Circuits. 43:2747-2758 |
| ISSN: |
0018-9200 |
| DOI: |
10.1109/jssc.2008.2004870 |
| Popis: |
Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed- loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135degC under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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