Electrical Study of Pentacene-Based Metal–Semiconductor–Metal Structure: Schottky Barrier and Active Layer Thickness Effects
| Autor: | Abdelghaffar Nasri, A. Boubaker, Wassim Khaldi, Kamal Lmimouni, Adel Kalboussi |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanostructures, nanoComponents & Molecules - IEMN (NCM-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN) |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
organic Schottky barrier chemistry.chemical_element 02 engineering and technology 01 natural sciences 7. Clean energy Pentacene Metal [SPI]Engineering Sciences [physics] chemistry.chemical_compound Aluminium 0103 physical sciences Schottky diode Electrical and Electronic Engineering Diffusion (business) 010302 applied physics business.industry modeling pentacene 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Active layer chemistry visual_art Electrode visual_art.visual_art_medium Optoelectronics Electronics 0210 nano-technology business |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (11), pp.5009-5013. ⟨10.1109/TED.2018.2869537⟩ IEEE Transactions on Electron Devices, 2018, 65 (11), pp.5009-5013. ⟨10.1109/TED.2018.2869537⟩ |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | International audience; The impact of electrodes and active layer thickness on the current-voltage characteristics of Au/Pentacene/Al structure was studied using a physicallybased 2-D simulation by solving Poisson's, continuity, and drift diffusion equations. The main parameters required for simulation are extracted from the logarithmic representation of experimental current-voltage curves. The simulation results produce an excellent overlapping with the experimental data after including parameters previously found in our model. Finally, the simulation was used to better understand the physical processes together with mechanisms governing the efficiency of the device under investigation and to have a predictive behavior. |
| Databáze: | OpenAIRE |
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