PECVD grown SiC cantilevers with Dry and Wet Release

Autor:	Adithi Umamaheswara, M. N. Vijayaraghavan, Suman Gupta, Lavendra, Smitha Nair, Navakanta Bhat
Rok vydání:	2014
Předmět:	Electrical Communication Engineering Materials science Cantilever Silicon chemistry Plasma-enhanced chemical vapor deposition Stiction chemistry.chemical_element Nanotechnology Composite material
Zdroj:	Physics of Semiconductor Devices ISBN: 9783319030012
ISSN:	2381-3652
Popis:	Cantilevers made out of PECVD grown SiC films are reported here. The cantilevers were realized in two different methods—isotropic etch (Dry release) and combination of wet etch and critical point dry release. The dry release process for Silicon isotropic etch results in excellent etch selectivity against SiC, to provide released structures. The optimized wet release process is able to overcome stiction issues to provide excellent SiC cantilevers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c895d5f16a330a32a7068d72acae7453 https://igi.indrastra.com/items/show/186390 Zobrazit plný text záznamu