| Autor: |
Thomas D. Anthopoulos, Mary O'Neill, Khue T. Lai, Stephen M. Kelly, Satyajit Das, E. Verrelli, Neil T. Kemp, Fahad A. Alharthi, Fei Cheng |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
RSC Advances |
| Popis: |
We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 104, a turn-on voltage (VON) of 1.2 V and a threshold voltage (VT) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer (k = 7–9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO2 nanorods. A solution processed zinc oxide (ZnO) layer acts as the semiconductor. The new surface-modified TiO2 nanorods were synthesised using a ligand replacement process with a monolayer coating of photopolymerisable 10-undecynylphosphonic acid (10UCYPA) to render them both soluble in common organic solvents and be photopolymerisable using UV-illumination after having been deposited on substrate surfaces from solution and drying. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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