Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability

Autor:	Sung Hyeon Jung, Ji Sook Yang, Young Been Kim, Nishad G. Deshpande, Dong Su Kim, Ji Hoon Choi, Hee Won Suh, Hak Hyeon Lee, Hyung Koun Cho
Rok vydání:	2022
Předmět:	Mechanics of Materials Process Chemistry and Technology General Materials Science Electrical and Electronic Engineering
Zdroj:	Materials Horizons. 9:1010-1022
ISSN:	2051-6355 2051-6347
DOI:	10.1039/d1mh01568k
Popis:	In this study, we designed a new transistor structure without spacers using an electrodeposition method for the active layer. We strategically utilized grain boundary tunability for the fabrication of spacer-free p-type vertical transistors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c65c8caf5fcd6caf9441a01eb67925d2 https://doi.org/10.1039/d1mh01568k Zobrazit plný text záznamu