Effect of Adjacent Bit-Line Cell Interference on Low Frequency Noise in NAND Flash Memory Cell Strings
| Autor: | Bong-Su Jo, Sung-Min Joe, Jong-Ho Lee, Sung-Kye Park, Kyung-Rok Han, Min-Kyu Jeong |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Nand flash memory business.industry Infrasound Biomedical Engineering Analytical chemistry Bioengineering General Chemistry Low frequency Condensed Matter Physics Interference (wave propagation) Cutoff frequency Spectral line General Materials Science business Electronic band structure Energy (signal processing) Computer hardware |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 13:6405-6408 |
| ISSN: | 1533-4899 1533-4880 |
| Popis: | The effect of adjacent bit-line (BL) interference on low frequency in 26 nm NAND flash memory was characterized. With the program (P) and erase (E) states of adjacent cells, current fluctuation (deltaI(BL)) and corner frequency (f(c)) of Lorentzian spectrum were changed. DeltaI(BL) due to RTN ranges from approximately 67.3 nA to approximately 45.9 nA with 4 different modes (P/P, P/E, E/P, E/E) of the state of adjacent cells and f(c) ranges from 48 Hz to 89 Hz. Using measured deltaI(BL) and extracted capture (tau(c)) and emission times (tau(e)) with 4 different modes, we calculated tau and f(c), and extracted the position of a trap in the channel width direction with deltaI(BL) and simulated data. The calculated data showed excellent agreement with measured spectra. Finally, we prepared energy band diagrams in P/P and P/E modes using 3-D device simulation and clarified the effect of adjacent bit-line cell interference. The control gate bias is slightly higher in P/P mode than P/E mode, and then trap energy in P/P mode is relatively lower than that in P/E mode, resulting in shorter capture time in P/P mode. |
| Databáze: | OpenAIRE |
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