InP-based quantum cascade lasers monolithically integrated onto silicon
Autor: | Stuart A. Edwards, N G Huy, Amy W. K. Liu, Rowel Go, Matthew Suttinger, J. M. Fastenau, X. M. Fang, A. Eisenbach, M. Fetters, D. Lubyshev, M. J. Furlong, H. Krysiak, Pedro Figueiredo, Aled Morgan, Arkadiy Lyakh |
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Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Laser 01 natural sciences Waveguide (optics) Atomic and Molecular Physics and Optics law.invention Optics chemistry Cascade law 0103 physical sciences 0210 nano-technology Quantum cascade laser business Lasing threshold Quantum well |
Zdroj: | Optics express. 26(17) |
ISSN: | 1094-4087 |
Popis: | Lasing is reported for ridge-waveguide devices processed from a 40-stage InP-based quantum cascade laser structure grown on a 6-inch silicon substrate with a metamorphic buffer. The structure used in the proof-of-concept experiment had a typical design, including an Al0.78In0.22As/In0.73Ga0.27As strain-balanced composition, with high strain both in quantum wells and barriers relative to InP, and an all-InP waveguide with a total thickness of 8 µm. Devices of size 3 mm x 40 µm, with a high-reflection back facet coating, emitted at 4.35 µm and had a threshold current of approximately 2.2 A at 78 K. Lasing was observed up to 170 K. Compared to earlier demonstrated InP-based quantum cascade lasers monolithically integrated onto GaAs, the same laser structure integrated on silicon had a lower yield and reliability. Surface morphology analysis suggests that both can be significantly improved by reducing strain for the active region layers relative to InP bulk waveguide layers surrounding the laser core. |
Databáze: | OpenAIRE |
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