Radiation-Stimulated Changes in the Characteristics of Surface-Barrier Al–Si–Bi Structures with Different Concentrations of Dislocations at the Crystal Surface
| Autor: | Marek Jałbrzykowski, B. Pavlyk, D. P. Slobodzyan, Markijan Kushlyk, Igor Matvijishyn, R. M. Lys |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Surface (mathematics) Surface barrier Materials science Condensed matter physics Silicon Mechanical Engineering radiation-stimulated reconstruction of defects Mechanics of engineering. Applied mechanics chemistry.chemical_element silicon 02 engineering and technology surface layers TA349-359 Radiation 021001 nanoscience & nanotechnology 01 natural sciences Crystal chemistry Control and Systems Engineering 0103 physical sciences 0210 nano-technology surface-barrier structures dislocations |
| Zdroj: | Acta Mechanica et Automatica, Vol 12, Iss 1, Pp 72-77 (2018) |
| ISSN: | 2300-5319 |
| Popis: | We report the results of studies for the radiation-stimulated changes in electro-physical characteristics of surface-barrier Al–Si–Bi structures based on p-Si. We demonstrate that the X-ray irradiation is accompanied by different processes which depend on the density of the dislocations in the original silicon crystals. A usual evolution of the existing structural defects and their radiation-stimulated ordering dominate when the concentration remains low enough. Increase in the concentration causes the increasing role of generation of additional radiation defects. Modelling of the underlying physical processes has testified that the near-contact Si layers are strained. They act as getters for the structural defects and impurities. |
| Databáze: | OpenAIRE |
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