Boron nitride substrates for high-quality graphene electronics
| Autor: | Andrea Young, Inanc Meric, Takashi Taniguchi, Cory Dean, Kenneth L. Shepard, James Hone, Kenji Watanabe, Sebastian Sorgenfrei, Changgu Lee, Philip Kim, Lei Wang |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Condensed Matter - Mesoscale and Nanoscale Physics Graphene Doping Biomedical Engineering FOS: Physical sciences Bioengineering Heterojunction Nanotechnology Substrate (electronics) Nitride Condensed Matter Physics Atomic and Molecular Physics and Optics law.invention Nanomaterials chemistry.chemical_compound chemistry law Boron nitride Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science Electrical and Electronic Engineering Bilayer graphene |
| Popis: | Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres. 20 pages (includes supplementary info), 7 figures |
| Databáze: | OpenAIRE |
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