Integrated Quantum Photonics with Silicon Carbide: Challenges and Prospects
| Autor: | Jelena Vuckovic, Daniil Lukin, Melissa A. Guidry |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors FOS: Physical sciences Physics::Optics ComputerApplications_COMPUTERSINOTHERSYSTEMS 02 engineering and technology 01 natural sciences Condensed Matter::Materials Science chemistry.chemical_compound 0103 physical sciences Silicon carbide 010306 general physics Quantum Computer Science::Databases General Environmental Science Quantum Physics business.industry General Engineering Physics::Classical Physics 021001 nanoscience & nanotechnology Engineering physics Quantum technology chemistry ComputerSystemsOrganization_MISCELLANEOUS Physics::Accelerator Physics General Earth and Planetary Sciences Photonics Quantum Physics (quant-ph) 0210 nano-technology business |
| Zdroj: | PRX Quantum. 1 |
| ISSN: | 2691-3399 |
| Popis: | Optically-addressable solid-state spin defects are promising candidates for storing and manipulating quantum information using their long coherence ground state manifold; individual defects can be entangled using photon-photon interactions, offering a path toward large scale quantum photonic networks. Quantum computing protocols place strict limits on the acceptable photon losses in the system. These low-loss requirements cannot be achieved without photonic engineering, but are attainable if combined with state-of-the-art nanophotonic technologies. However, most materials that host spin defects are challenging to process: as a result, the performance of quantum photonic devices is orders of magnitude behind that of their classical counterparts. Silicon carbide (SiC) is well-suited to bridge the classical-quantum photonics gap, since it hosts promising optically-addressable spin defects and can be processed into SiC-on-insulator for scalable, integrated photonics. In this Perspective, we discuss recent progress toward the development of scalable quantum photonic technologies based on solid state spins in silicon carbide, and discuss current challenges and future directions. 20 pages, 6 figures |
| Databáze: | OpenAIRE |
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