Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes

Autor: Kenzo Fujiwara, A Hori, H Aizawa, Akihiro Satake, K Soejima
Rok vydání: 2006
Předmět:
Zdroj: physica status solidi c. 3:589-593
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200564117
Popis: Electroluminescence (EL) and photoluminescence (PL) properties have been investigated of the high-brightness green InGaN single quantum well (SQW) diode over a wide temperature range (T = 15–300 K) and as a function of injection current level. When the necessary forward bias conditions to get a certain current level are different, it is found that the anomalous temperature-dependent EL efficiency varies quite differently. That is, when the current is low and thus the forward driving voltage is small, the EL quenching observed below 100 K for high injection current levels is less significant or even absent due to the efficient carrier capture. This finding is consistent with decrease of the PL efficiency with increasing the bias over +2.5 V. These results indicate that the EL efficiency is significantly influenced by the interplay of internal and external field effects on the carrier capture and escape processes in addition to the localization phenomena caused by In fluctuations in the SQW layer. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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