Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
| Autor: | Wookyung Sun, Seongjae Cho, Songyi Yoo, In Man Kang, Hyeonjeong Kim, Hyungsoon Shin |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon lcsh:Mechanical engineering and machinery Silicon on insulator chemistry.chemical_element 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Article Margin (machine learning) 0103 physical sciences Hardware_INTEGRATEDCIRCUITS lcsh:TJ1-1570 Electrical and Electronic Engineering 010302 applied physics Hardware_MEMORYSTRUCTURES business.industry Mechanical Engineering 021001 nanoscience & nanotechnology chemistry grain boundary electron trapping Control and Systems Engineering one-transistor dynamic random-access memory (1T-DRAM) Thin body Optoelectronics Grain boundary Transient (oscillation) State (computer science) 0210 nano-technology business polysilicon Dram |
| Zdroj: | Micromachines Micromachines, Vol 11, Iss 2, p 228 (2020) Volume 11 Issue 2 |
| ISSN: | 2072-666X |
| Popis: | Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implementation of a silicon-on-insulator (SOI) structure and a three-dimensional (3D) stacked architecture for increasing integration density. However, studies on the transient characteristics of poly-Si 1T-DRAM are still lacking. In this paper, with TCAD simulation, we examine the differences between the memory mechanisms in poly-Si and silicon body 1T-DRAM. A silicon 1T-DRAM cell&rsquo s data state is determined by the number of holes stored in a floating body (FB), while a poly-Si 1T-DRAM cell&rsquo s state depends on the number of electrons trapped in its grain boundary (GB). This means that a poly-Si 1T-DRAM can perform memory operations by using GB as a storage region in thin body devices with a small FB area. |
| Databáze: | OpenAIRE |
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